DocumentCode
2687151
Title
Contiguous-Domain Transferred-Electron Oscillators
Author
Cooper, J.A. ; Thornber, K.K.
fYear
1985
fDate
4-6 June 1985
Firstpage
423
Lastpage
426
Abstract
We describe a new monolithic millimeter-wave semiconductor oscillator which is capable of supporting a contiguous sequence of charge domains in the drift channel. The frequency is not determined by a transit time effect, but rather by the spacing between adjacent domains, and can be electrically tuned from a few gigahertz to a few hundred gigahertz.
Keywords
Electrons; Electrostatics; Gallium arsenide; Gunn devices; Microwave devices; Microwave oscillators; RLC circuits; Resonance; Resonant frequency; Tuned circuits;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1985 IEEE MTT-S International
Conference_Location
St. Louis, MO, USA
ISSN
0149-645X
Type
conf
DOI
10.1109/MWSYM.1985.1132001
Filename
1132001
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