Low temperature sinterable (Zn,Mg)TiO3 microwave dielectrics

Author

Chen, Lih-Shan ; Hsieh, Ming-Liang ; Hsu, Hsiang-Chen ; Fu, Shen-Li

Author_Institution

Dept. of Electron. Eng., I-Shou Univ., Kaohsiung

fYear

2008

fDate

28-31 July 2008

Firstpage

1

Lastpage

4

Abstract

In this work, low temperature sintering of microwave dielectric (Zn_1-xMg_x)TiO₃ were studied. Sintering temperature of (Zn_1-xMg_x)TiO₃ system was lowered by the addition of dopants that could lower the sintering temperature while maintaining the dielectric properties. (Zn,Mg)TiO₃ can be well densified at low temperatures for 4wt% Bi₂O₃ + 1wt% V₂O₅ -doped specimens. Dielectric properties of 4wt% Bi₂O₃+ 1wt% V₂O₅ -doped (Zn_0.9Mg_0.1)TiO₃ ceramics sintered at 850 degC for 1 h were epsiv_r=26.85, Qtimesf =42351GHz and tau_f= 4.92 ppm/degC.

Keywords

bismuth compounds; ceramics; dielectric materials; doping; magnesium compounds; microwave materials; permittivity; sintering; vanadium compounds; zinc compounds; (Zn_1-xMg_x)TiO₃:Bi₂O₃-V₂O₅; ceramics; densification; dopants; microwave dielectrics; sintering temperature; temperature 850 degC; time 1 h; Ceramics; Crystalline materials; Dielectric losses; Dielectric materials; Dielectric measurements; Permittivity measurement; Powders; Resonance; Resonant frequency; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronic Packaging Technology & High Density Packaging, 2008. ICEPT-HDP 2008. International Conference on

Conference_Location

Shanghai

Print_ISBN

978-1-4244-2739-0

Electronic_ISBN

978-1-4244-2740-6

Type

conf

DOI

10.1109/ICEPT.2008.4607045

Filename

4607045