Title :
Low temperature sinterable (Zn,Mg)TiO3 microwave dielectrics
Author :
Chen, Lih-Shan ; Hsieh, Ming-Liang ; Hsu, Hsiang-Chen ; Fu, Shen-Li
Author_Institution :
Dept. of Electron. Eng., I-Shou Univ., Kaohsiung
Abstract :
In this work, low temperature sintering of microwave dielectric (Zn1-xMgx)TiO3 were studied. Sintering temperature of (Zn1-xMgx)TiO3 system was lowered by the addition of dopants that could lower the sintering temperature while maintaining the dielectric properties. (Zn,Mg)TiO3 can be well densified at low temperatures for 4wt% Bi2O3 + 1wt% V2O5 -doped specimens. Dielectric properties of 4wt% Bi2O3+ 1wt% V2O5 -doped (Zn0.9Mg0.1)TiO3 ceramics sintered at 850 degC for 1 h were epsivr=26.85, Qtimesf =42351GHz and tauf= 4.92 ppm/degC.
Keywords :
bismuth compounds; ceramics; dielectric materials; doping; magnesium compounds; microwave materials; permittivity; sintering; vanadium compounds; zinc compounds; (Zn1-xMgx)TiO3:Bi2O3-V2O5; ceramics; densification; dopants; microwave dielectrics; sintering temperature; temperature 850 degC; time 1 h; Ceramics; Crystalline materials; Dielectric losses; Dielectric materials; Dielectric measurements; Permittivity measurement; Powders; Resonance; Resonant frequency; Temperature;
Conference_Titel :
Electronic Packaging Technology & High Density Packaging, 2008. ICEPT-HDP 2008. International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-2739-0
Electronic_ISBN :
978-1-4244-2740-6
DOI :
10.1109/ICEPT.2008.4607045
