Title :
A 10-GS/s multibit delta-sigma analog-to-digital converter in an InP HBT technology
Author :
Kraus, S. ; Kallfass, I. ; Makon, R.E. ; Driad, R. ; Moyal, M. ; Ritter, D.
Author_Institution :
Dept. of Electr. Eng., Technion - Israel Inst. of Technol., Haifa, Israel
Abstract :
Continuous time delta-sigma (CTΔΣ) analog-to-digital converters (ADCs) are capable of sampling at much higher rates than discrete time ΔΣ converters. This makes heterojunction bipolar transistor (HBT) technologies excellent candidates for the implementation of fast CTΔΣ ADCs. Due to linearity considerations, all HBT-based ΔΣ ADCs known to us incorporated a single-bit digital-to-analog converter (DAC). Here, we present a multibit lowpass ΔΣ ADC based upon the InP HBT technology, which incorporates an internal resolution of 2 bits. The ADC was clocked at 10 GHz, its total power consumption was 1.9 W, and it obtained a signal-to-noise ratio (SNR) of 44.1 dB at signal bandwidth of 312.5 MHz.
Keywords :
III-V semiconductors; analogue-digital conversion; delta-sigma modulation; heterojunction bipolar transistors; indium compounds; CTΔΣ-ADC; HBT technology; InP; bandwidth 312.5 MHz; continuous time delta-sigma analog-to-digital converters; discrete time ΔΣ converters; frequency 10 GHz; heterojunction bipolar transistor; multibit delta-sigma analog-to-digital converter; multibit lowpass ΔΣ ADC; power 1.9 W; power consumption; signal-to-noise ratio; word length 2 bit; Clocks; Delay; Heterojunction bipolar transistors; Linearity; Operational amplifiers; Signal to noise ratio; Analog-digital conversion; bipolar integrated circuits; delta-sigma modulation; heterojunction bipolar transistors;
Conference_Titel :
Microwaves, Communications, Antennas and Electronics Systems (COMCAS), 2011 IEEE International Conference on
Conference_Location :
Tel Aviv
Print_ISBN :
978-1-4577-1692-8
DOI :
10.1109/COMCAS.2011.6105929
