Structural and electrical properties of iron-silicide thin film resistor deposited by cosputtering

Author

Sorimachi, Y. ; Honda, K. ; Tusbata, I. ; Inose, Y. Ich ; Miyauchi, Shoko

Author_Institution

Nagaoka Univ. of Technol., Niigata, Japan

fYear

1990

fDate

0-0 1990

Firstpage

414

Lastpage

418

Abstract

The sheet resistance, TCR, thermoelectric power, and frequency characteristics of cosputtered iron-silicide thin film are examined. The values of sheet resistance and TCR for 1000-AA thick films are 20 Omega to 30 Omega and +200 to -4000 ppm/ degrees C, respectively, depending on composition in the range of 48 to 68 at.% Si. In particular, zero TCR film is formed at the composition of 54 at.% Si, and the film structure is considered to consist of FeSi and FeSi/sub 2/, which have positive and negative TCR, respectively.<>

Keywords

iron compounds; sputter deposition; sputtered coatings; thin film resistors; FeSi-FeSi/sub 2/; TCR; composition; cosputtering; electrical properties; film structure; frequency characteristics; sheet resistance; silicides; structural properties; thermoelectric power; thin film resistor; zero TCR film; Conductivity; Electric resistance; Electrical resistance measurement; Frequency; Iron; Resistors; Semiconductor films; Sputtering; Thermal resistance; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronic Manufacturing Technology Symposium, 1990, IEMT Conference., 8th IEEE/CHMT International

Conference_Location

Baveno, Italy

Type

conf

DOI

10.1109/IEMT8.1990.171046

Filename

171046