• DocumentCode
    2687328
  • Title

    A 2.4GHz CMOS LNA with full ESD protection

  • Author

    Jiwei Chen ; Bingxue Shi

  • Author_Institution
    Inst. of Microelectron., Tsinghua Univ., Beijing, China
  • Volume
    2
  • fYear
    2003
  • fDate
    21-24 Oct. 2003
  • Firstpage
    1058
  • Abstract
    This paper proposed a CMOS LNA with full ESD protection, which means that all pads of this circuit can sustain a HBM stress up to 2kV under various zapping modes. Using all standard devices provided by the foundry with their parasitic included, the verification of the ESD performance in the circuit design process can be executed very easily and the results are reliable. Besides of the remarkable ESD performance, this circuit also provides excellent performance in other aspects: 23 dB gain at 2.4GHz, about 3 dB NF, -20.8 dBm input P1dB compression point, -15 dBm IIP3. The total circuit draws 20mA current from a 1.8V power supply voltage.
  • Keywords
    CMOS integrated circuits; amplifiers; electrostatic discharge; integrated circuit design; 1.8 V; 2.4 GHz; 20 mA; 23 dB; 3 dB; CMOS; ESD performance; ESD protection; HBM stress; IIP3; LNA; circuit design process; electrostatic discharge; zapping modes;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    ASIC, 2003. Proceedings. 5th International Conference on
  • ISSN
    1523-553X
  • Print_ISBN
    0-7803-7889-X
  • Type

    conf

  • DOI
    10.1109/ICASIC.2003.1277394
  • Filename
    1277394