DocumentCode
2687328
Title
A 2.4GHz CMOS LNA with full ESD protection
Author
Jiwei Chen ; Bingxue Shi
Author_Institution
Inst. of Microelectron., Tsinghua Univ., Beijing, China
Volume
2
fYear
2003
fDate
21-24 Oct. 2003
Firstpage
1058
Abstract
This paper proposed a CMOS LNA with full ESD protection, which means that all pads of this circuit can sustain a HBM stress up to 2kV under various zapping modes. Using all standard devices provided by the foundry with their parasitic included, the verification of the ESD performance in the circuit design process can be executed very easily and the results are reliable. Besides of the remarkable ESD performance, this circuit also provides excellent performance in other aspects: 23 dB gain at 2.4GHz, about 3 dB NF, -20.8 dBm input P1dB compression point, -15 dBm IIP3. The total circuit draws 20mA current from a 1.8V power supply voltage.
Keywords
CMOS integrated circuits; amplifiers; electrostatic discharge; integrated circuit design; 1.8 V; 2.4 GHz; 20 mA; 23 dB; 3 dB; CMOS; ESD performance; ESD protection; HBM stress; IIP3; LNA; circuit design process; electrostatic discharge; zapping modes;
fLanguage
English
Publisher
ieee
Conference_Titel
ASIC, 2003. Proceedings. 5th International Conference on
ISSN
1523-553X
Print_ISBN
0-7803-7889-X
Type
conf
DOI
10.1109/ICASIC.2003.1277394
Filename
1277394
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