Title :
A 2.4GHz CMOS LNA with full ESD protection
Author :
Jiwei Chen ; Bingxue Shi
Author_Institution :
Inst. of Microelectron., Tsinghua Univ., Beijing, China
Abstract :
This paper proposed a CMOS LNA with full ESD protection, which means that all pads of this circuit can sustain a HBM stress up to 2kV under various zapping modes. Using all standard devices provided by the foundry with their parasitic included, the verification of the ESD performance in the circuit design process can be executed very easily and the results are reliable. Besides of the remarkable ESD performance, this circuit also provides excellent performance in other aspects: 23 dB gain at 2.4GHz, about 3 dB NF, -20.8 dBm input P1dB compression point, -15 dBm IIP3. The total circuit draws 20mA current from a 1.8V power supply voltage.
Keywords :
CMOS integrated circuits; amplifiers; electrostatic discharge; integrated circuit design; 1.8 V; 2.4 GHz; 20 mA; 23 dB; 3 dB; CMOS; ESD performance; ESD protection; HBM stress; IIP3; LNA; circuit design process; electrostatic discharge; zapping modes;
Conference_Titel :
ASIC, 2003. Proceedings. 5th International Conference on
Print_ISBN :
0-7803-7889-X
DOI :
10.1109/ICASIC.2003.1277394