DocumentCode
2687473
Title
High performance SOI gate-bulk connected LCMOSFET for RF power amplifier application in short and medium range wireless communication systems
Author
Guoyan Zhang ; Xin Sun ; Ru Huang ; Xing Zhang ; Yangyuan Wang
Author_Institution
Dept. of Microelectron., Peking Univ., Beijing, China
Volume
2
fYear
2003
fDate
21-24 Oct. 2003
Firstpage
1098
Abstract
A novel application of SOI gate-bulk connected (GBC) LDMOSFET for RF power amplifier in short and medium range wireless communication is proposed. This application allows the power transistor to give higher intrinsic gain, lower power consumption, boost driving current capability and increase breakdown voltage. The results show that the good performance of this novel application can be used in the design of RF transmitter.
Keywords
power MOSFET; power amplifiers; power transistors; radiofrequency amplifiers; radiofrequency integrated circuits; silicon-on-insulator; LCMOSFET; RF power amplifier; RF transmitter; SOI gate-bulk; boost driving current capability; higher intrinsic gain; increase breakdown voltage; lower power consumption; medium range wireless communication systems; power transistor; short range wireless communication systems;
fLanguage
English
Publisher
ieee
Conference_Titel
ASIC, 2003. Proceedings. 5th International Conference on
ISSN
1523-553X
Print_ISBN
0-7803-7889-X
Type
conf
DOI
10.1109/ICASIC.2003.1277404
Filename
1277404
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