DocumentCode
2687506
Title
The design of CMOS RF low noise amplifiers
Author
Ke Cao ; Huazhong Yang ; Hui Wang
Author_Institution
Dept. of Electron. Eng., Tsinghua Univ., Beijing, China
Volume
2
fYear
2003
fDate
21-24 Oct. 2003
Firstpage
1106
Abstract
A design approach of CMOS radio frequency (RF) low noise amplifiers (LNAs) is presented in this paper. With short-channel MOSFET model, analytical model of the source degenerated amplifiers is derived and verified by simulation at 2.4GHz with 0.18μm technology. It is shown that low noise and low power may probably be achieved simultaneously. With the help of these models, the designer can not only get the optimal designs or quickly and intuitively dig out the problem of the circuitry.
Keywords
CMOS integrated circuits; MOSFET; circuit simulation; low-power electronics; radiofrequency amplifiers; radiofrequency integrated circuits; 0.18 microns; 2.4 GHz; CMOS; LNA performance; RF low noise amplifiers; analytical model; circuit optimization; low power electronics; low-noise electronics; short-channel MOSFET model; source degenerated amplifiers;
fLanguage
English
Publisher
ieee
Conference_Titel
ASIC, 2003. Proceedings. 5th International Conference on
ISSN
1523-553X
Print_ISBN
0-7803-7889-X
Type
conf
DOI
10.1109/ICASIC.2003.1277406
Filename
1277406
Link To Document