DocumentCode
2687519
Title
A study of advanced millimeter-wave components monolithically integrated in silicon
Author
Preisler, E. ; Talor, G. ; Howard, D. ; Yan, Z. ; Booth, R. ; Zheng, J. ; Chaudhry, S. ; Racanelli, M.
Author_Institution
TowerJazz, Newport Beach, CA, USA
fYear
2011
fDate
7-9 Nov. 2011
Firstpage
1
Lastpage
3
Abstract
Several mixed-signal components built in a SiGe BiCMOS process are examined for use in mm-wave circuits. The key gain component is the SiGe heterostructure bipolar transistor which is examined in detail. However several other components such as varactors, p-i-n and Schottky diodes are examined for their suitability in performing basic circuit functions in mm-wave designs.
Keywords
BiCMOS integrated circuits; Ge-Si alloys; field effect MIMIC; heterojunction bipolar transistors; integrated circuit design; mixed analogue-digital integrated circuits; BiCMOS process; SiGe; heterostructure bipolar transistor; millimetre wave circuits; millimetre wave design; mixed-signal components; monolithically integrated millimeter wave components; silicon; BiCMOS integrated circuits; Gain; Heterojunction bipolar transistors; Radio frequency; Schottky diodes; Silicon germanium; Varactors;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwaves, Communications, Antennas and Electronics Systems (COMCAS), 2011 IEEE International Conference on
Conference_Location
Tel Aviv
Print_ISBN
978-1-4577-1692-8
Type
conf
DOI
10.1109/COMCAS.2011.6105946
Filename
6105946
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