DocumentCode
2687624
Title
20 GHz GaAs IMPATT Diode Development for Solid State Transmitter
Author
Delaney, W.J. ; Jones, V.H. ; Sun, C.
fYear
1985
fDate
4-6 June 1985
Firstpage
525
Lastpage
527
Abstract
Double drift Read GaAs IMPATT diodes were fabricated for K Band from high quality MBE material. Single diode oscillator performance of 4.36w output and 19% efficiency were obtained at the flange of a reduced height cavity. A maximum power of 5.37W was obtained at a reduced efficiency.
Keywords
Diodes; Doping profiles; Furnaces; Gallium arsenide; Impedance; Molecular beam epitaxial growth; Packaging; Power generation; Solid state circuits; Transmitters;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1985 IEEE MTT-S International
Conference_Location
St. Louis, MO, USA
ISSN
0149-645X
Type
conf
DOI
10.1109/MWSYM.1985.1132028
Filename
1132028
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