Title :
20 GHz GaAs IMPATT Diode Development for Solid State Transmitter
Author :
Delaney, W.J. ; Jones, V.H. ; Sun, C.
Abstract :
Double drift Read GaAs IMPATT diodes were fabricated for K Band from high quality MBE material. Single diode oscillator performance of 4.36w output and 19% efficiency were obtained at the flange of a reduced height cavity. A maximum power of 5.37W was obtained at a reduced efficiency.
Keywords :
Diodes; Doping profiles; Furnaces; Gallium arsenide; Impedance; Molecular beam epitaxial growth; Packaging; Power generation; Solid state circuits; Transmitters;
Conference_Titel :
Microwave Symposium Digest, 1985 IEEE MTT-S International
Conference_Location :
St. Louis, MO, USA
DOI :
10.1109/MWSYM.1985.1132028
