• DocumentCode
    2687704
  • Title

    Low Noise Amplifiers Using Two Dimensional Electron Gas FETs

  • Author

    Mochizuki, T. ; Honma, K. ; Handa, K. ; Akinaga, W. ; Ohata, K.

  • fYear
    1985
  • fDate
    4-6 June 1985
  • Firstpage
    543
  • Lastpage
    546
  • Abstract
    Recently developed LNAs incorporating two dimensional electron gas (2 DEG) FETs for satellite communications earth stations are disclosed, which give epoch-making low noise as FET LNAs to operate. in the 2, 4, 12, and 20 GHz bands at room temperature, especially under cooled state. Typically detailed further is newly developed 4 GHz band LNA with 55 K max. noise temperature at room temperature, noise temperatures of the order of 30 K across 800 MHz bandwidth (3.4 to 4.2 GHz) under thermoelectrically (TE- ) cooled state (about-45°C), which has been adopted in the new earth station conducted by KDD.
  • Keywords
    Circuits; Cooling; Electrons; Frequency; Gallium arsenide; Low-noise amplifiers; Microwave FETs; Satellite communication; Satellite ground stations; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium Digest, 1985 IEEE MTT-S International
  • Conference_Location
    St. Louis, MO, USA
  • ISSN
    0149-645X
  • Type

    conf

  • DOI
    10.1109/MWSYM.1985.1132034
  • Filename
    1132034