DocumentCode :
2687704
Title :
Low Noise Amplifiers Using Two Dimensional Electron Gas FETs
Author :
Mochizuki, T. ; Honma, K. ; Handa, K. ; Akinaga, W. ; Ohata, K.
fYear :
1985
fDate :
4-6 June 1985
Firstpage :
543
Lastpage :
546
Abstract :
Recently developed LNAs incorporating two dimensional electron gas (2 DEG) FETs for satellite communications earth stations are disclosed, which give epoch-making low noise as FET LNAs to operate. in the 2, 4, 12, and 20 GHz bands at room temperature, especially under cooled state. Typically detailed further is newly developed 4 GHz band LNA with 55 K max. noise temperature at room temperature, noise temperatures of the order of 30 K across 800 MHz bandwidth (3.4 to 4.2 GHz) under thermoelectrically (TE- ) cooled state (about-45°C), which has been adopted in the new earth station conducted by KDD.
Keywords :
Circuits; Cooling; Electrons; Frequency; Gallium arsenide; Low-noise amplifiers; Microwave FETs; Satellite communication; Satellite ground stations; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest, 1985 IEEE MTT-S International
Conference_Location :
St. Louis, MO, USA
ISSN :
0149-645X
Type :
conf
DOI :
10.1109/MWSYM.1985.1132034
Filename :
1132034
Link To Document :
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