• DocumentCode
    2687750
  • Title

    36.0 - 40.0 GHz HEMT Low Noise Amplifier

  • Author

    Shelley, Matthew ; Berenz, J. ; Nichols, A. ; Nakano, K. ; Sawires, R. ; Abell, J.

  • fYear
    1985
  • fDate
    4-6 June 1985
  • Firstpage
    555
  • Lastpage
    558
  • Abstract
    This paper describes the design and development of a multistage low noise High Electron Mobility Transistor (HEMT) amplifier that exhibits state-of-the-art performance over the frequency range of 36-40 GHz. The amplifier utilizes a series of three single ended stages that are each designed around TRW´s HEMT device. Typical performance to date has been 15-17 dB gain with an associated noise figure of 4.0 to 4.6 dB.
  • Keywords
    Fabrication; Frequency; Gallium arsenide; HEMTs; Lithography; Low-noise amplifiers; MESFETs; Noise figure; Noise measurement; Performance gain;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium Digest, 1985 IEEE MTT-S International
  • Conference_Location
    St. Louis, MO, USA
  • ISSN
    0149-645X
  • Type

    conf

  • DOI
    10.1109/MWSYM.1985.1132037
  • Filename
    1132037
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2687750