• DocumentCode
    2687805
  • Title

    The synthesis and curing kinetics of the silicon-containing epoxy resin with environmentally friendship flame retardance

  • Author

    Ming-Shan Yang ; Jie He ; Lin-Kai Li ; Zhen Liu

  • Author_Institution
    Dept. of Mater. Sci. & Eng., Beijing Inst. of Petrochem. Technol., Beijing
  • fYear
    2008
  • fDate
    28-31 July 2008
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    Silicon-containing epoxy resin (CNE-Si) was synthesized from diphenylsilandiol (DPSD) and ortho-cresol novolac epoxy resin using SnCl2 as catalyst. The chemical structure of CNE-Si prepared in this paper was characterized by 1H-NMR and FTIR. The thermal stability was analyzed by TGA. The result showed that the -Si- group enhanced the thermal stability of the epoxy resin. The curing kinetics of the system was studied by non-isothermal DSC. The kinetic parameters of the curing reaction including the activation energy were calculated using Kissinger and Ozawa method. The results showed that the system containing CNE-Si has lower curing temperature and more quick curing speed compared to CNE, which offers basic data for the application of CNE-Si in large-scale circuit packaging.
  • Keywords
    Fourier transform spectra; chemical structure; curing; differential scanning calorimetry; infrared spectra; integrated circuit packaging; nuclear magnetic resonance; polymer structure; polymers; thermal stability; FTIR spectra; Kissinger method; NMR; Ozawa method; TGA; activation energy; chemical structure; curing kinetics; diphenylsilandiol; epoxy resin; flame retardance; nonisothermal DSC; ortho-cresol novolac; thermal stability; Chemicals; Circuits; Curing; Epoxy resins; Fires; Kinetic theory; Large-scale systems; Stability analysis; Temperature; Thermal stability; Silicon-containing epoxy resin; curing kinetics; synthesis;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronic Packaging Technology & High Density Packaging, 2008. ICEPT-HDP 2008. International Conference on
  • Conference_Location
    Shanghai
  • Print_ISBN
    978-1-4244-2739-0
  • Electronic_ISBN
    978-1-4244-2740-6
  • Type

    conf

  • DOI
    10.1109/ICEPT.2008.4607083
  • Filename
    4607083