Title :
30 dB of AGC from an FET
Abstract :
A low-noise single-gate GaAs MESFET has been successfully used to provide a 30-dB AGC range for low-noise amplifiers in down-converters used in microwave communication systems from 4 to 11 GHz. Threshold NF is not affected. With 30 dB of AGC, the FET amplifier NF is 18 dB.
Keywords :
Attenuation; Circuits; Gallium arsenide; Low-noise amplifiers; Microwave FETs; Microwave communication; Noise figure; Noise measurement; Radiofrequency amplifiers; Voltage control;
Conference_Titel :
Microwave Symposium Digest, 1985 IEEE MTT-S International
Conference_Location :
St. Louis, MO, USA
DOI :
10.1109/MWSYM.1985.1132054
