DocumentCode :
2688020
Title :
A 177 K gate 150 PS CMOS SOG with 1856 I/O buffers
Author :
Murayama, Yotoaki ; Matsuda, Yukihiko ; Yoshida, Kenji ; Ooka, Hideyuki ; Otani, Toshihiko ; Toyoda, Shuji ; Tsubokura, Fusao ; Aso, Akira
fYear :
1989
fDate :
15-18 May 1989
Abstract :
A CMOS SOG (sea-of-gates) that contains 177 K raw gates, corresponding to 1.4 M transistors and having a delay time of as fast as 150 ps, has been developed in a 0.8-μm CMOS technology. The SOG can accommodate a RAM of either a high-density type with 64 K bits maximum, a high-speed type with 6-ns access time, or a mixture of both. The SOG contains 1856 I/O buffers in the peripheral area of the die, providing high flexibility for interfacing circuits to the SOG
Keywords :
CMOS integrated circuits; application specific integrated circuits; logic arrays; random-access storage; 0.8 micron; 150 ps; 6 ns; 64 Kbit; CMOS SOG; I/O buffers; RAM; access time; delay time; interfacing; peripheral area; raw gates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Custom Integrated Circuits Conference, 1989., Proceedings of the IEEE 1989
Conference_Location :
San Diego, CA, USA
Type :
conf
DOI :
10.1109/CICC.1989.56715
Filename :
5726182
Link To Document :
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