Title :
Steady-state bipolar transistor simulator for the 77 K-300 K temperature range
Author :
Chrzanowska-Jeske, Malgorzata ; Jaeger, Richard C.
Abstract :
BILOW, a steady-state one-dimensional bipolar transistor simulator for the 77 K-300 K temperature range, is presented. Examples of internal device characteristics for a medium-voltage n-p-n silicon bipolar transistor demonstrate the capability of the simulation. Calculated current gain and unity gain frequency versus current density for temperatures down to liquid nitrogen temperature (77 K) are presented and discussed. It is concluded that the simulator is a very useful tool for investigating different design approaches and the influence of process design on the temperature dependence of bipolar transistor parameters
Keywords :
bipolar transistors; semiconductor device models; 77 to 300 K; BILOW; Si; current density; current gain; internal device characteristics; medium-voltage n-p-n; steady-state one-dimensional bipolar transistor simulator; unity gain frequency;
Conference_Titel :
Custom Integrated Circuits Conference, 1989., Proceedings of the IEEE 1989
Conference_Location :
San Diego, CA, USA
DOI :
10.1109/CICC.1989.56720
