Title :
A three-transistor model for submicron MOSFET
Author :
Wong, S.C. ; Lin, H.C.
Abstract :
A three-transistor model is presented for simulating threshold voltage reduction due to the charge-sharing effect and damage induced degradation in submicrometer MOSFETs. The channel behavior is treated with three MOSFETs in series. These MOSFETs have different threshold voltages and mobilities due to charge sharing and surface damage. An analytic solution is derived, and the results agree with MINIMOS2 and experimental data. This model is simpler and more computationally efficient for circuit simulation than the usual 2-D numerical modeling approaches
Keywords :
insulated gate field effect transistors; semiconductor device models; 2-D numerical modeling; MINIMOS2; charge-sharing effect; circuit simulation; computationally efficient; damage induced degradation; submicron MOSFET; surface damage; three-transistor model; threshold voltage reduction;
Conference_Titel :
Custom Integrated Circuits Conference, 1989., Proceedings of the IEEE 1989
Conference_Location :
San Diego, CA, USA
DOI :
10.1109/CICC.1989.56724
