Title :
Influence of pressure on intrinsic bistability in GaSb/AlSb double-barrier quantum structures: simulating model and qualitative results
Author :
Dragunov, Valeriy P. ; Shishkov, Andrey A.
Author_Institution :
Dept. of Semicond. Devices & Microelectron., Novosibirsk State Tech. Univ., Russia
Abstract :
For GaSb/AlSb based heterostructures a model which takes into account the intervalley phonon scattering has been worked out. We have shown, that for double barrier quantum structures (DBQS) there are two types of the intrinsic bistability dependence upon applied pressure depending on geometrical parameters and doping concentration in the emitter of DBQS
Keywords :
III-V semiconductors; aluminium compounds; electron-phonon interactions; gallium compounds; high-pressure effects; resonant tunnelling; semiconductor quantum wells; GaSb-AlSb; I-V characteristics; double-barrier quantum structures; emitter doping concentration; geometrical parameters; heterostructures; high pressure; intervalley phonon scattering; intrinsic bistability; resonant tunnelling; Brillouin scattering; Charge carrier processes; Electronic mail; Electrons; Equations; Microelectronics; Particle scattering; Phonons; Resonant tunneling devices; Semiconductor devices;
Conference_Titel :
Electron Devices and Materials, 2000. EDM 2000. Siberian Russian Student Workshops on
Conference_Location :
Novosibirsk
Print_ISBN :
5-7782-0291-1
DOI :
10.1109/SREDM.2000.888529
