Influence of pressure on intrinsic bistability in GaSb/AlSb double-barrier quantum structures: simulating model and qualitative results

Author

Dragunov, Valeriy P. ; Shishkov, Andrey A.

Author_Institution

Dept. of Semicond. Devices & Microelectron., Novosibirsk State Tech. Univ., Russia

fYear

2000

fDate

2000

Firstpage

38

Lastpage

42

Abstract

For GaSb/AlSb based heterostructures a model which takes into account the intervalley phonon scattering has been worked out. We have shown, that for double barrier quantum structures (DBQS) there are two types of the intrinsic bistability dependence upon applied pressure depending on geometrical parameters and doping concentration in the emitter of DBQS

Keywords

III-V semiconductors; aluminium compounds; electron-phonon interactions; gallium compounds; high-pressure effects; resonant tunnelling; semiconductor quantum wells; GaSb-AlSb; I-V characteristics; double-barrier quantum structures; emitter doping concentration; geometrical parameters; heterostructures; high pressure; intervalley phonon scattering; intrinsic bistability; resonant tunnelling; Brillouin scattering; Charge carrier processes; Electronic mail; Electrons; Equations; Microelectronics; Particle scattering; Phonons; Resonant tunneling devices; Semiconductor devices;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Materials, 2000. EDM 2000. Siberian Russian Student Workshops on

Conference_Location

Novosibirsk

Print_ISBN

5-7782-0291-1

Type

conf

DOI

10.1109/SREDM.2000.888529

Filename

888529