Title :
Spectra of holes in a quantum well GexSi1-x on Si(001) substrates
Author :
Makarov, Evgeny A. ; Sychev, Andrey Y.
Author_Institution :
Dept. of Semicond. Devices & Microelectron., Novosibirsk State Tech. Univ., Russia
Abstract :
The extremes of valley energy in stressed layers of GexSi1-x on Si (001) substrates are calculated and analysed. The calculations show that the bottom of a conduction band settles down in the 2Δ-valley, and the light hole band is located above the heavy hole band at any value of x. The effects of dimensional quantization gives a diminution of distance between valleys of light and heavy holes, and this effect amplifies for higher Ge content
Keywords :
Ge-Si alloys; Schrodinger equation; conduction bands; hole density; semiconductor quantum wells; two-dimensional electron gas; valence bands; (001) substrates; 2D hole gas; GeSi-Si; Schrodinger equation; Si; conduction band bottom; dimensional quantization effect; effective mass; heavy hole band; hole mobility; hole spectra; light hole band; quantum well; spin-orbit splitting; stressed layers; valence band; valley energy extremes; Anisotropic magnetoresistance; Charge carrier processes; Charge carriers; Elasticity; Electron mobility; FETs; Germanium silicon alloys; Lattices; Silicon germanium; Solids;
Conference_Titel :
Electron Devices and Materials, 2000. EDM 2000. Siberian Russian Student Workshops on
Conference_Location :
Novosibirsk
Print_ISBN :
5-7782-0291-1
DOI :
10.1109/SREDM.2000.888536
