DocumentCode
2688347
Title
Gate-control strategies for snubberless operation of series connected IGBTs
Author
Gerster, Christian ; Hofer, Patrick ; Karrer, Nico
Author_Institution
Electr. Eng. & Design Lab., Swiss Federal Inst. of Technol., Zurich, Switzerland
Volume
2
fYear
1996
fDate
23-27 Jun 1996
Firstpage
1739
Abstract
Increasing the operation voltage and hence the switching power by series connection of IGBT-modules causes transient and static voltage imbalances. To achieve snubberless operation, novel gate-control strategies have been developed. Active gate-controlled voltage balancing and gate-side di/dt-control as well as dv/dt-control are presented in theory and with measurement results
Keywords
electric current control; insulated gate bipolar transistors; power convertors; power semiconductor switches; voltage control; active gate-controlled voltage balancing; dv/dt-control; gate-control strategies; gate-side di/dt-control; operation voltage; power converters; series connected IGBT; snubberless operation; static voltage imbalances; switching power; transient voltage imbalances; Circuits; Delay; Electromagnetic compatibility; Insulated gate bipolar transistors; Stress; Switches; Switching frequency; Temperature control; Valves; Voltage control;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Electronics Specialists Conference, 1996. PESC '96 Record., 27th Annual IEEE
Conference_Location
Baveno
ISSN
0275-9306
Print_ISBN
0-7803-3500-7
Type
conf
DOI
10.1109/PESC.1996.548815
Filename
548815
Link To Document