Title :
Fabrication of Si and SiGe vertical dual carrier field effect transistor and its SOI resistor load switching ASIC with effective channel length of 30nm
Author :
Li, G.H. ; Yang, Roger ; Tang, Z.M. ; Yang, Young Hwi ; Han, D.J. ; Huang, D.H. ; Xu, Peng ; Xu, Y.Z. ; Zhang, J.C. ; Lin, C.L. ; Wu, C.L. ; Chen, Bo-Wei ; Yan, F.Z. ; Ren, Y.L. ; Yu, L.K. ; Cai, I.M. ; Tian, X.N. ; Du, S.C. ; Huang, Chao
Author_Institution :
Beijing Normal Univ., China
Abstract :
Fabrication of Si and SiGe vertical dual carrier field effect transistor (VDCFET) with effective channel length of 30nm, using lithographic equipment for linewidths greater than 180nm, is presented. The main process of fabrication used is ion implantation for Si VDCFET. The main process of fabrication used is molecular beam epitaxy for SiGe VDCFET. Fabrication of SOI switching VDCFET flip flop with effective channel length of 30nm, using lithographic equipment for linewidths greater than 180nm, is also presented.
Keywords :
application specific integrated circuits; elemental semiconductors; field effect transistors; ion implantation; molecular beam epitaxial growth; semiconductor device manufacture; silicon compounds; silicon-on-insulator; 30 nm; ASIC; SOI resistor load switching; SiGe; VDCFET; flip flop; ion implantation; lithographic equipment; molecular beam epitaxy; vertical dual carrier field effect transistor;
Conference_Titel :
ASIC, 2003. Proceedings. 5th International Conference on
Print_ISBN :
0-7803-7889-X
DOI :
10.1109/ICASIC.2003.1277465
