Title :
Simulation of source-to-drain (S/D) tunnelling in sub-10nm DG MOSFETs with WKB method
Author :
Bo Jiang ; Dawei Zhang ; Lilin Tian ; Zhiping Yu
Author_Institution :
Inst. of Microelectron., Tsinghua Univ., Beijing, China
Abstract :
As the gate length of MOSFETs keeps scaled down, source-to-drain (S/D) tunnelling current becomes significant. S/D tunnelling current is simulated in this work using WKB method, and is based on the quantum ballistic transport model. The dependence of the S/D tunnelling current on channel length and silicon film thickness is examined. It is shown that with channel length as small as 6nm, only extremely thin silicon film (thickness of 1nm) can deliver good device characteristics. Comparison to NEGF simulation confirms the validity of the proposed approach.
Keywords :
Green´s function methods; MOSFET; WKB calculations; circuit simulation; silicon; tunnelling; 10 nm; DG MOSFET; NEGF simulation; S-D tunnelling current; Si; WKB method; channel length; gate length; nonequilibrium Green´s function; quantum ballistic transport model; silicon film thickness; source-to-drain;
Conference_Titel :
ASIC, 2003. Proceedings. 5th International Conference on
Print_ISBN :
0-7803-7889-X
DOI :
10.1109/ICASIC.2003.1277470
