DocumentCode
2688536
Title
Simulation of source-to-drain (S/D) tunnelling in sub-10nm DG MOSFETs with WKB method
Author
Bo Jiang ; Dawei Zhang ; Lilin Tian ; Zhiping Yu
Author_Institution
Inst. of Microelectron., Tsinghua Univ., Beijing, China
Volume
2
fYear
2003
fDate
21-24 Oct. 2003
Firstpage
1361
Abstract
As the gate length of MOSFETs keeps scaled down, source-to-drain (S/D) tunnelling current becomes significant. S/D tunnelling current is simulated in this work using WKB method, and is based on the quantum ballistic transport model. The dependence of the S/D tunnelling current on channel length and silicon film thickness is examined. It is shown that with channel length as small as 6nm, only extremely thin silicon film (thickness of 1nm) can deliver good device characteristics. Comparison to NEGF simulation confirms the validity of the proposed approach.
Keywords
Green´s function methods; MOSFET; WKB calculations; circuit simulation; silicon; tunnelling; 10 nm; DG MOSFET; NEGF simulation; S-D tunnelling current; Si; WKB method; channel length; gate length; nonequilibrium Green´s function; quantum ballistic transport model; silicon film thickness; source-to-drain;
fLanguage
English
Publisher
ieee
Conference_Titel
ASIC, 2003. Proceedings. 5th International Conference on
ISSN
1523-553X
Print_ISBN
0-7803-7889-X
Type
conf
DOI
10.1109/ICASIC.2003.1277470
Filename
1277470
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