Title :
Moisture absorption and void growing effects on failure of electronic packaging
Author :
Zhendong, Zhao ; Zhigang, Li ; Yu, Zhang ; Xue, Shu
Author_Institution :
Inst. of Appl. Mech.&Biomed. Eng., Taiyuan Univ. of Technol., Taiyuan
Abstract :
The purpose of this paper is to study the combined effect of moisture absorption and void growing on the reliability of electronic packaging. Finite element simulation on a plastic PBGA package was carried out for moisture history from the moisture preconditioning (85 degC / 85 % RH for 168 h) to subsequent exposure to a lead-free soldering process, and the rule of moisture diffusion and the change of stress was found. Then, with the implementation of interface properties into the model study, the critical stress that results in the unstable void growth and the delamination at interface is significantly reduced and comparable to the magnitude of vapor pressure. Finite element results give a good guideline on the underfill material selection, and also give an insight of the failure mechanism associated with moisture absorption.
Keywords :
ball grid arrays; failure analysis; integrated circuit packaging; integrated circuit reliability; moisture; reflow soldering; thermal management (packaging); vapour pressure; IC package; electronic packaging failure; electronic packaging reliability; failure mechanism; finite element simulation; interface delamination; lead-free soldering process; moisture absorption; moisture diffusion; moisture induced vapor pressure; moisture preconditioning; plastic PBGA package; reflow temperatures; temperature 85 C; time 168 h; underfill material selection; unstable void growth; Absorption; Electronics packaging; Environmentally friendly manufacturing techniques; Finite element methods; History; Lead; Moisture; Plastic packaging; Soldering; Stress; finite element simulation; moisture absorption; moisture diffusion; vapor pressure;
Conference_Titel :
Electronic Packaging Technology & High Density Packaging, 2008. ICEPT-HDP 2008. International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-2739-0
Electronic_ISBN :
978-1-4244-2740-6
DOI :
10.1109/ICEPT.2008.4607128