Improved 3.5 kV IGBT-diode chipset and 800 A module applications

Author

Brunner, Heinrich ; Bruckmann, Martin ; Hierholzer, Martin ; Laska, Thomas ; Porst, Alfred

Author_Institution

Corp. Res. & Dev., Siemens AG, Munich, Germany

Volume

2

fYear

1996

fDate

23-27 Jun 1996

Firstpage

1748

Abstract

A major feature of the improved IGBT-diode chipset is the quasi temperature independent switching losses. The temperature coefficients of the diode on-state voltage and the IGBT saturation voltage are positive. The cell area portion of the IGBT is optimized with respect to a low saturation voltage and short-circuit current. Due to the negligible recombination within the n base of the used NPT-IGBT structure, the short circuit current is independent of the collector emitter voltage

Keywords

choppers (circuits); fault currents; insulated gate bipolar transistors; losses; power semiconductor diodes; power semiconductor switches; short-circuit currents; 3.5 kV; 800 A; IGBT saturation voltage; IGBT-diode chipset; cell area optimisation; chopper circuit; collector emitter voltage; diode on-state voltage; module applications; quasi temperature independent switching losses; short-circuit current; temperature coefficients; Insulated gate bipolar transistors; Low voltage; Multichip modules; Radiative recombination; Research and development; Semiconductor diodes; Short circuit currents; Snubbers; Switching loss; Temperature dependence;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics Specialists Conference, 1996. PESC '96 Record., 27th Annual IEEE

Conference_Location

Baveno

ISSN

0275-9306

Print_ISBN

0-7803-3500-7

Type

conf

DOI

10.1109/PESC.1996.548817

Filename

548817