Title :
The mechanism of formation, growth and transformation of microdefects in dislocation-free monocrystals of silicon
Author :
Talanin, Vitaly I.
Author_Institution :
Zaporozhye State Eng. Acad., Ukraine
Abstract :
During the growth of dislocation-free monocrystals of silicon the main influence on the formation and distribution of microdefects are the process of growth and cooling of crystals and the axial temperature gradient. Complex research on undoped dislocation-free silicon monocrystals obtained by zone melting are carried out. The crystals were obtained with various growth rates under the various types of processing such as thermal processing and ion implantation. The methods of electron and optical microscopy were used to examine the microdefects
Keywords :
dislocation loops; electron microscopy; elemental semiconductors; interstitials; optical microscopy; semiconductor growth; silicon; vacancies (crystal); zone melting; Si; axial temperature gradient; crystal growth; dislocation-free monocrystals; electron microscopy; growth rate; interstitial dislocation loops; interstitial microdefects; ion implantation; microdefects formation; microdefects growth; microdefects transformation; optical microscopy; thermal processing; vacancies; zone melting; Crystallization; Crystals; Electron microscopy; Fabrication; Impurities; Lattices; Optical microscopy; Silicon; Space technology; Temperature;
Conference_Titel :
Electron Devices and Materials, 2000. EDM 2000. Siberian Russian Student Workshops on
Conference_Location :
Novosibirsk
Print_ISBN :
5-7782-0291-1
DOI :
10.1109/SREDM.2000.888561
