DocumentCode
2688847
Title
High performance gate drives for utilizing the IGBT in the active region
Author
Githiari, A.N. ; Leedham, R.J. ; Palmer, P.R.
Author_Institution
Dept. of Eng., Cambridge Univ., UK
Volume
2
fYear
1996
fDate
23-27 Jun 1996
Firstpage
1754
Abstract
The advantages of operating the IGBT in its active region for active snubbing and series operation have been established in the literature. In this paper we describe the implementation and performance of several gate drive circuits suitable for use in closed loop control of the IGBT voltage. The application of the gate drives to active control of a wide range of IGBT devices is demonstrated and discussed
Keywords
driver circuits; insulated gate bipolar transistors; power semiconductor switches; protection; snubbers; switching circuits; voltage control; IGBT; IGBT voltage control; active control; active region; active snubbing; closed loop control; gate drive circuits; high performance gate drives; series operation; Circuits; Drives; Energy consumption; Frequency; Inductors; Insulated gate bipolar transistors; MOSFETs; Operational amplifiers; Semiconductor optical amplifiers; Voltage control;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Electronics Specialists Conference, 1996. PESC '96 Record., 27th Annual IEEE
Conference_Location
Baveno
ISSN
0275-9306
Print_ISBN
0-7803-3500-7
Type
conf
DOI
10.1109/PESC.1996.548818
Filename
548818
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