• DocumentCode
    2688901
  • Title

    Bipolar Transistor Ku-Band Oscillators with Low Phase-Noise

  • Author

    Ansorge, Ch.

  • fYear
    1986
  • fDate
    2-4 June 1986
  • Firstpage
    91
  • Lastpage
    94
  • Abstract
    The frequency range of low cost silicon bipolar transistors can be extended using finline technique. Oscillators built up this way show high efficiency and output power up to Ku-band. The biggest advantage over the GsAs-FET is the very low phase-noise near the carrier of the bipolar oscillator.
  • Keywords
    Bipolar transistors; Circuits; Costs; FETs; Finline; Frequency; Inductance; Oscillators; Packaging; Power generation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium Digest, 1986 IEEE MTT-S International
  • Conference_Location
    Baltimore, MD, USA
  • ISSN
    0149-645X
  • Type

    conf

  • DOI
    10.1109/MWSYM.1986.1132117
  • Filename
    1132117
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2688901