Title :
Bipolar Transistor Ku-Band Oscillators with Low Phase-Noise
Abstract :
The frequency range of low cost silicon bipolar transistors can be extended using finline technique. Oscillators built up this way show high efficiency and output power up to Ku-band. The biggest advantage over the GsAs-FET is the very low phase-noise near the carrier of the bipolar oscillator.
Keywords :
Bipolar transistors; Circuits; Costs; FETs; Finline; Frequency; Inductance; Oscillators; Packaging; Power generation;
Conference_Titel :
Microwave Symposium Digest, 1986 IEEE MTT-S International
Conference_Location :
Baltimore, MD, USA
DOI :
10.1109/MWSYM.1986.1132117
