DocumentCode
2688997
Title
Numerical simulation of the nonlinearity of the piezoresistive effect in the p-type silicon
Author
Kolchuzhin, Vladimir A.
Author_Institution
Novosibirsk State Tech. Univ., Russia
fYear
2000
fDate
2000
Firstpage
103
Lastpage
110
Abstract
The results of numerical simulation of the piezoresistance effect in silicon are presented. The simulation is based on the complete expression for an energy spectrum (G.E. Pikus and G.L. Bir, 1972) using a formalism of relaxation time. The dependence of piezoresistance nonlinearity on crystallographic orientation is investigated
Keywords
Boltzmann equation; Fermi level; carrier relaxation time; elemental semiconductors; perturbation theory; piezoresistance; silicon; valence bands; Boltzmann equation; Fermi level; Si; crystallographic orientation dependence; energy spectrum; numerical simulation; p-type silicon; perturbation theory; piezoresistive effect nonlinearity; piezoresistive sensors; relaxation time; stress-induced changes; uniaxial strain; valence bands; Capacitive sensors; Crystallography; Electromechanical sensors; Germanium; Mechanical sensors; Numerical simulation; Piezoresistance; Silicon; Stress; Transducers;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices and Materials, 2000. EDM 2000. Siberian Russian Student Workshops on
Conference_Location
Novosibirsk
Print_ISBN
5-7782-0291-1
Type
conf
DOI
10.1109/SREDM.2000.888577
Filename
888577
Link To Document