Title :
A five-volt only flash EEPROM technology for high density memory and system IC applications
Author :
Gill, M. ; Cleavelin, R. ; Lin, S. ; D´Arrigo, I. ; Santin, G. ; Shah, P. ; Nguyen, A. ; Lahiry, R. ; DeSimone, P. ; Piva, G. ; Paterson, J.
Abstract :
A CMOS contactless cell array technology has been developed for a single-power-supply high-density, five-V-only flash memory and for system programmable IC applications. The technology´s suitability for VLSI memories has been demonstrated by a 256-kb flash EEPROM (electronically erasable programmable read-only memory) chip. This low-current five-V-only approach has been proved, with cell area and cost comparable to recently reported high-current dual-power-supply flash EEPROMs
Keywords :
CMOS integrated circuits; EPROM; VLSI; cellular arrays; integrated circuit technology; integrated memory circuits; 256 kbit; 5 V; VLSI memories; contactless cell array technology; double level poly CMOS; electronically erasable programmable read-only memory; flash EEPROM technology; high density memory; low current operation; n-twin-well process; single-power-supply; system programmable IC applications;
Conference_Titel :
Custom Integrated Circuits Conference, 1989., Proceedings of the IEEE 1989
Conference_Location :
San Diego, CA, USA
DOI :
10.1109/CICC.1989.56783
