DocumentCode :
268942
Title :
Room-temperature operation of InAs-based interband-cascade-lasers beyond 6 μm
Author :
Dallner, Matthias ; Höfling, S. ; Kamp, M.
Author_Institution :
Tech. Phys., Univ. Wurzburg, Würzburg, Germany
Volume :
49
Issue :
4
fYear :
2013
fDate :
Feb. 14 2013
Firstpage :
286
Lastpage :
287
Abstract :
A report is presented on long wavelength room-temperature operation of InAs-based interband cascade lasers (ICLs) at 6.06 μm. The broad area and ridge waveguide devices operate in pulsed mode up to 25 and 40 μC, respectively, and therewith extend the available room-temperature operation range of ICLs to longer wavelengths.
Keywords :
III-V semiconductors; indium compounds; laser modes; optical pulse generation; ridge waveguides; semiconductor lasers; ICL; InAs; broad area devices; interband-cascade-lasers; long wavelength room-temperature operation; pulsed mode; ridge waveguide devices; temperature 293 K to 298 K; wavelength 6.06 mum;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el.2012.4450
Filename :
6464690
Link To Document :
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