Title :
A FET Amplifier in Fin-Line Technique
Author :
L´Ecuyer, J. ; Gajda, G.B. ; Hoefer, W.J.R.
Abstract :
This paper describes the successful demonstration of a stable FET amplifier using fin-line technique. The circuit has been realized in integrated E-plane technology, utilizing two main fin-line ports and a microstrip/coplanar bias circuit. The amplifier was designed for 17 GHz operation using a NE67300 FET and achieved a gain of 6 dB over a bandwidth of 1 GHz.
Keywords :
Circuits; Cutoff frequency; Finline; Microstrip; Microwave FETs; Microwave communication; Oscillators; Radio frequency; Radiofrequency amplifiers; Waveguide transitions;
Conference_Titel :
Microwave Symposium Digest, 1986 IEEE MTT-S International
Conference_Location :
Baltimore, MD, USA
DOI :
10.1109/MWSYM.1986.1132171
