Title :
RF Nonlinear Device Characterization Yields Improved Modeling Accuracy
Author :
Smith, M.A. ; Howard, T.S. ; Anderson, K.J. ; Pavio, A.M.
Abstract :
A new method for measuring the nonlinear characteristics of microwave GaAs field-effect transistors (FETs) has been developed and evaluated. The technique, which involves RF rather than DC FET measurement, has yielded significant improvement in circuit compression point and harmonic content modeling accuracy.
Keywords :
Circuits; Current measurement; Electrical resistance measurement; Gallium arsenide; Microwave FETs; Microwave measurements; Microwave theory and techniques; Pulse amplifiers; Radio frequency; Voltage;
Conference_Titel :
Microwave Symposium Digest, 1986 IEEE MTT-S International
Conference_Location :
Baltimore, MD, USA
DOI :
10.1109/MWSYM.1986.1132198
