DocumentCode
2690163
Title
Model-Extrapolated S-Parameter Design of MM-Wave GaAs FET Amplifiers
Author
Dearden, L. ; Miner, G. ; Sayed, M.
fYear
1986
fDate
2-4 June 1986
Firstpage
385
Lastpage
388
Abstract
Broadband millimeter-wave GaAs MESFET amplifiers have been designed from model-extrapolated S-parameters. An equivalent circuit MESFET model valid to 40 GHz is given. Amplifier performance from 15-50 GHz is shown and compared with the equivalent circuit model.
Keywords
Bonding; Equivalent circuits; FETs; Frequency; Gain; Gallium arsenide; MESFETs; Millimeter wave measurements; Millimeter wave technology; Scattering parameters;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1986 IEEE MTT-S International
Conference_Location
Baltimore, MD, USA
ISSN
0149-645X
Type
conf
DOI
10.1109/MWSYM.1986.1132199
Filename
1132199
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