Title :
Characterization and Design of GaAs MESFETs for Broadband Control Applications
Author :
Gutmann, R.J. ; Fryklund, D. ; Menzer, D.
Abstract :
A variety of discrete and monolithically integrated GaAs MESFETs have been characterized for microwave switching figure-of-merit and power handling capability. Design principles for GaAs FETs in broadband switching applications are presented with an emphasis on tradeoffs between conducting-state resistance, non-conducting state capacitance and power handling. Switching frequency figure-of-merit values between 200 and 400 GHz have been achieved with 1 watt power handling capability.
Keywords :
Doping; FETs; Gallium arsenide; MESFETs; Power semiconductor switches; Radio frequency; Switching circuits; Switching frequency; Testing; Voltage control;
Conference_Titel :
Microwave Symposium Digest, 1986 IEEE MTT-S International
Conference_Location :
Baltimore, MD, USA
DOI :
10.1109/MWSYM.1986.1132200
