DocumentCode :
2690252
Title :
Design of high speed 2write/6read eight-port register file
Author :
Wang Fang ; Ji Lijiu
Author_Institution :
Inst. of Microelectron., Peking Univ., Beijing, China
Volume :
1
fYear :
2003
fDate :
21-24 Oct. 2003
Firstpage :
498
Abstract :
This paper gives a delay model of the register files which are made of multi-port SRAM technology. Then we realized a 32word×32 bit 2write/6read eight-Port register files. During the realization, according to the presenting delay model, we present a grouping wordline method to reduce the delay time of register files, also there are some structure modifying for the storage cells of register files. With the 2.5 v 0.25 μm CMOS technology, simulation results show that delay time of the register file is reduced by 11.5% than the register file which hasn´t adopted novel method.
Keywords :
CMOS memory circuits; SRAM chips; delays; high-speed integrated circuits; multiport networks; 0.25 micron; 2.5 V; 2write/6read eight-port register file design; CMOS technology; complementary metal-oxide-semiconductor technology; delay time reduction; grouping wordline method; high speed integrated circuits; multiport SRAM technology; static random access memory; storage cells;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
ASIC, 2003. Proceedings. 5th International Conference on
ISSN :
1523-553X
Print_ISBN :
0-7803-7889-X
Type :
conf
DOI :
10.1109/ICASIC.2003.1277595
Filename :
1277595
Link To Document :
بازگشت