• DocumentCode
    2690252
  • Title

    Design of high speed 2write/6read eight-port register file

  • Author

    Wang Fang ; Ji Lijiu

  • Author_Institution
    Inst. of Microelectron., Peking Univ., Beijing, China
  • Volume
    1
  • fYear
    2003
  • fDate
    21-24 Oct. 2003
  • Firstpage
    498
  • Abstract
    This paper gives a delay model of the register files which are made of multi-port SRAM technology. Then we realized a 32word×32 bit 2write/6read eight-Port register files. During the realization, according to the presenting delay model, we present a grouping wordline method to reduce the delay time of register files, also there are some structure modifying for the storage cells of register files. With the 2.5 v 0.25 μm CMOS technology, simulation results show that delay time of the register file is reduced by 11.5% than the register file which hasn´t adopted novel method.
  • Keywords
    CMOS memory circuits; SRAM chips; delays; high-speed integrated circuits; multiport networks; 0.25 micron; 2.5 V; 2write/6read eight-port register file design; CMOS technology; complementary metal-oxide-semiconductor technology; delay time reduction; grouping wordline method; high speed integrated circuits; multiport SRAM technology; static random access memory; storage cells;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    ASIC, 2003. Proceedings. 5th International Conference on
  • ISSN
    1523-553X
  • Print_ISBN
    0-7803-7889-X
  • Type

    conf

  • DOI
    10.1109/ICASIC.2003.1277595
  • Filename
    1277595