DocumentCode :
269028
Title :
The Influence of High Temperatures on Radiation Damage of GaInP 
/GaAs/Ge Triple Junction Cells
Author :
Brandt, Christian ; Baur, Carsten ; Caon, A. ; Müller-Buschbaum, Peter ; Zimmermann, Christian ; Andreev, T.
Author_Institution :
Phys. Dept., Tech. Univ. Munchen, Garching, Germany
Volume :
3
Issue :
2
fYear :
2013
fDate :
Apr-13
Firstpage :
904
Lastpage :
908
Abstract :
We report on the isothermal annealing behavior of 1 MeV electron irradiated component cells of a GaInP2/GaAs/Ge triple-junction solar cell. The defect concentration as a function of annealing time and temperature is derived from the in situ measured open-circuit voltages. The time-dependent behavior reveals the presence of partly overlapping exponential decays in defect concentration that, in turn, suggests the annealing of more than one defect having different activation energies.
Keywords :
III-V semiconductors; annealing; defect states; electron beam effects; elemental semiconductors; gallium arsenide; gallium compounds; germanium; high-temperature effects; indium compounds; semiconductor junctions; solar cells; GaInP2-GaAs-Ge; activation energies; annealing temperature; annealing time; defect concentration; electron irradiated component cells; electron volt energy 1 MeV; high temperature effects; in situ measured open-circuit voltages; isothermal annealing; partly overlapping exponential decays; radiation damage; time-dependent behavior; triple-junction solar cell; Annealing; Gallium arsenide; Junctions; Photovoltaic cells; Photovoltaic systems; Radiation effects; Temperature measurement; Particle irradiation; solar cells; space missions;
fLanguage :
English
Journal_Title :
Photovoltaics, IEEE Journal of
Publisher :
ieee
ISSN :
2156-3381
Type :
jour
DOI :
10.1109/JPHOTOV.2013.2242958
Filename :
6472005
Link To Document :
