Title :
High Efficiency One, Two, and Four Watt Class B FET Power Amplifiers
Author :
Lane, J.R. ; Freitag, R.G. ; Degenford, J.E. ; Cohn, M.
Abstract :
A family of X-band amplifier utilizing the higher efficiency of class B operation has been designed and fabricated. This paper describes the circuitry and performance of 1 watt single-ended, 2 watt push-pull, and 4 watt dual push-pull amplifiers having typical power-added efficiencies of 45%, 40%, and 35%, respectively, in a 1 GHz bandwidth, with associated gains of 5.8 dB, 5.4 dB, and 5.0 dB . Additional data is given for fifteen each of the 1 watt and 2 watt units to show the consistency of their performance.
Keywords :
Bonding; Circuits; FETs; High power amplifiers; Impedance matching; Microwave amplifiers; Operational amplifiers; Power amplifiers; Power generation; Semiconductor device measurement;
Conference_Titel :
Microwave Symposium Digest, 1986 IEEE MTT-S International
Conference_Location :
Baltimore, MD, USA
DOI :
10.1109/MWSYM.1986.1132218
