DocumentCode
2690408
Title
60 and 70 GHz (HEMT) Amplifiers
Author
Sholley, M. ; Nichols, A.
fYear
1986
fDate
2-4 June 1986
Firstpage
463
Lastpage
465
Abstract
This paper describes the design and development of 60 and 70 GHz High Electron Mobility Transistor (HEMT) amplifiers. The 60 GHz amplifier exhibited a gain of 4.5 to 6.5 dB across the frequency band 56 to 62 GHz and had an associated noise figure of 6.0 dB measured at 57.5 GHz. The 72 GHz amplifier achieved a gain of 4 to 5 dB with a bandwidth of 2.5 GHz, with an associated noise figure of 7.8 measured at 71.0 GHz.
Keywords
Circuits; Frequency; Gallium arsenide; HEMTs; MESFETs; Noise figure; Operational amplifiers; Substrates; Waveguide components; Waveguide transitions;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1986 IEEE MTT-S International
Conference_Location
Baltimore, MD, USA
ISSN
0149-645X
Type
conf
DOI
10.1109/MWSYM.1986.1132221
Filename
1132221
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