Title :
60 and 70 GHz (HEMT) Amplifiers
Author :
Sholley, M. ; Nichols, A.
Abstract :
This paper describes the design and development of 60 and 70 GHz High Electron Mobility Transistor (HEMT) amplifiers. The 60 GHz amplifier exhibited a gain of 4.5 to 6.5 dB across the frequency band 56 to 62 GHz and had an associated noise figure of 6.0 dB measured at 57.5 GHz. The 72 GHz amplifier achieved a gain of 4 to 5 dB with a bandwidth of 2.5 GHz, with an associated noise figure of 7.8 measured at 71.0 GHz.
Keywords :
Circuits; Frequency; Gallium arsenide; HEMTs; MESFETs; Noise figure; Operational amplifiers; Substrates; Waveguide components; Waveguide transitions;
Conference_Titel :
Microwave Symposium Digest, 1986 IEEE MTT-S International
Conference_Location :
Baltimore, MD, USA
DOI :
10.1109/MWSYM.1986.1132221
