Prediction of Wideband Power Performance of MESFET Devices Using the Volterra Series Representation

Power performance of a medium power GaAs MESFET is predicted over the frequency range from 2GHz to 16GHz using a non-linear model where the non-linearities represented by power series up to the third order are derived from D.C. and low-frequency measurements. The analysis employs the Volterra series representation up to the third order. Experimental verification is made on a NE9000 medium power MESFET device. The agreement between predicted and measured output power at one dB. gain compression is within +- 0.5dB across the 2-16GHz band.