• DocumentCode
    2690607
  • Title

    Design of high performance CMOS linear readout integrated circuit

  • Author

    Gao Jun ; Lu Wengao ; Liu Jing ; Cui Wentao ; Tang Ju ; Chen Zhongjian ; Ji Lijiu

  • Author_Institution
    Inst. of Microelectron., Peking Univ., Beijing, China
  • Volume
    1
  • fYear
    2003
  • fDate
    21-24 Oct. 2003
  • Firstpage
    607
  • Abstract
    This paper details a high performance CMOS linear readout integrated circuit (ROIC) and the measured result. This ROIC realizes time-delay integration (TDI) to enhance the signal to noise ratio (S/N), and defective element deselection (DED) to decrease the probability of bad columns. The Other features include adjustable integration time, multi gain, bi-direction of TDI scan. super-sample, and electrical test. It is fabricated using 1.2-μm double poly double metal (DPDM) CMOS technology. The total power consumption is about 24 mW at 5 V supply voltage.
  • Keywords
    CMOS analogue integrated circuits; integrated circuit design; integrated circuit metallisation; readout electronics; 1.2 micron; CMOS linear readout integrated circuit; DED; DPDM CMOS technology; ROIC; S/N ratio; TDI; adjustable integration time; bad columns; defective element deselection; double poly double metal CMOS technology; electrical test; power consumption; probability; signal-to-noise ratio; time delay integration;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    ASIC, 2003. Proceedings. 5th International Conference on
  • ISSN
    1523-553X
  • Print_ISBN
    0-7803-7889-X
  • Type

    conf

  • DOI
    10.1109/ICASIC.2003.1277622
  • Filename
    1277622