DocumentCode :
2690607
Title :
Design of high performance CMOS linear readout integrated circuit
Author :
Gao Jun ; Lu Wengao ; Liu Jing ; Cui Wentao ; Tang Ju ; Chen Zhongjian ; Ji Lijiu
Author_Institution :
Inst. of Microelectron., Peking Univ., Beijing, China
Volume :
1
fYear :
2003
fDate :
21-24 Oct. 2003
Firstpage :
607
Abstract :
This paper details a high performance CMOS linear readout integrated circuit (ROIC) and the measured result. This ROIC realizes time-delay integration (TDI) to enhance the signal to noise ratio (S/N), and defective element deselection (DED) to decrease the probability of bad columns. The Other features include adjustable integration time, multi gain, bi-direction of TDI scan. super-sample, and electrical test. It is fabricated using 1.2-μm double poly double metal (DPDM) CMOS technology. The total power consumption is about 24 mW at 5 V supply voltage.
Keywords :
CMOS analogue integrated circuits; integrated circuit design; integrated circuit metallisation; readout electronics; 1.2 micron; CMOS linear readout integrated circuit; DED; DPDM CMOS technology; ROIC; S/N ratio; TDI; adjustable integration time; bad columns; defective element deselection; double poly double metal CMOS technology; electrical test; power consumption; probability; signal-to-noise ratio; time delay integration;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
ASIC, 2003. Proceedings. 5th International Conference on
ISSN :
1523-553X
Print_ISBN :
0-7803-7889-X
Type :
conf
DOI :
10.1109/ICASIC.2003.1277622
Filename :
1277622
Link To Document :
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