Title :
A 1V supply area effective CMOS Bandgap reference
Author :
Sheng Jinggang ; Chen Zhiliang ; Shi Bingxue
Author_Institution :
Inst. of Microelectron., Tsinghua Univ., Beijing, China
Abstract :
This paper works on implementation of CMOS Bandgap voltage reference circuits in condition of low voltage low power design. The presented Bandgap reference can operate at below 1V supply and generate about 0.5 V reference voltage. Simulation results show that it has a temperature coefficient of 60 μV/°C from -25°C to 125°C. When supply voltage varies from 0.95 to 2.5 V, output voltage is 503 mV±0.5 mV at 25°C. It is implemented with a standard 0.35 μm EEPROM CMOS process.
Keywords :
CMOS integrated circuits; EPROM; low-power electronics; operational amplifiers; reference circuits; -25 to 125 degC; 0.35 micron; 0.5 V; 0.95 to 2.5 V; 1 V; CMOS bandgap reference voltage circuits; EEPROM CMOS process; complementary metal oxide semiconductor; electrically erasable PROM process; low voltage low power design; operational amplifiers; parallel read only memory process; temperature coefficient;
Conference_Titel :
ASIC, 2003. Proceedings. 5th International Conference on
Print_ISBN :
0-7803-7889-X
DOI :
10.1109/ICASIC.2003.1277625
