Title :
Parallel operation of high power IGBTs
Author :
Médaule, D. ; Yu, Y.
Author_Institution :
Mitsubishi EPHQ, Le Mans, France
Abstract :
The paper shows third generation IGBTs behaviour and matching when connected in parallel. Test results give the actual current sharing between modules with different case temperature, Vcesat and wiring inductances. In the case of strong Vcesat or temperature differences it can be seen there is no catastrophic current mismatching. For inductive loads, the paper presents IGBT switching waveforms and summarises recommendations for parallelling
Keywords :
insulated gate bipolar transistors; load (electric); power bipolar transistors; power semiconductor switches; semiconductor device models; semiconductor device testing; Vcesat; case temperature; current matching; current sharing; inductive loads; parallel operation; power IGBTs; recommendations; switching waveforms; third generation; wiring inductance;
Conference_Titel :
IGBT Propulsion Drives, IEE Colloquium on
Conference_Location :
London
DOI :
10.1049/ic:19950529
