Reliability investigations of thin film metallizations of AlN-Ceramics

Author

Drost, A. ; Bonfert, D. ; Feil, M.

Author_Institution

Fraunhofer Inst. for Solid State Technol., Munich, Germany

fYear

1990

fDate

0-0 1990

Firstpage

440

Lastpage

449

Abstract

Tests have shown that thin-film technology can be successful on AlN substrates. The results are comparable to those for Al/sub 2/O/sub 3/. A resolution of 5- mu m line and spacings can be achieved on polished AlN surfaces. Adhesion of the metallization is good. Aging tests with different conductor systems show no differences with regard to the metallization. During a pressure cooker test, a hydrated alumina phase was built on the AlN surface, reducing surface resistance. The electrical properties of NiCr resistors show no difference on AlN and Al/sub 2/O/sub 3/.<>

Keywords

ageing; aluminium compounds; ceramics; chromium alloys; environmental testing; metallisation; nickel alloys; reliability; thin film circuits; thin film resistors; 5 micron; Al/sub 2/O/sub 3/; AlN substrates; AlN-Ceramics; NiCr resistors; NiCr-AlN; adhesion; ageing tests; conductor systems; electrical properties; line width; polished AlN surfaces; pressure cooker test; reliability; resolution; spacings; surface resistance; thin film metallizations; Adhesives; Aging; Conductors; Electric resistance; Metallization; Resistors; Substrates; Surface resistance; System testing; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronic Manufacturing Technology Symposium, 1990, IEMT Conference., 8th IEEE/CHMT International

Conference_Location

Baveno, Italy

Type

conf

DOI

10.1109/IEMT8.1990.171068

Filename

171068