DocumentCode :
2690843
Title :
Reliability investigations of thin film metallizations of AlN-Ceramics
Author :
Drost, A. ; Bonfert, D. ; Feil, M.
Author_Institution :
Fraunhofer Inst. for Solid State Technol., Munich, Germany
fYear :
1990
fDate :
0-0 1990
Firstpage :
440
Lastpage :
449
Abstract :
Tests have shown that thin-film technology can be successful on AlN substrates. The results are comparable to those for Al/sub 2/O/sub 3/. A resolution of 5- mu m line and spacings can be achieved on polished AlN surfaces. Adhesion of the metallization is good. Aging tests with different conductor systems show no differences with regard to the metallization. During a pressure cooker test, a hydrated alumina phase was built on the AlN surface, reducing surface resistance. The electrical properties of NiCr resistors show no difference on AlN and Al/sub 2/O/sub 3/.<>
Keywords :
ageing; aluminium compounds; ceramics; chromium alloys; environmental testing; metallisation; nickel alloys; reliability; thin film circuits; thin film resistors; 5 micron; Al/sub 2/O/sub 3/; AlN substrates; AlN-Ceramics; NiCr resistors; NiCr-AlN; adhesion; ageing tests; conductor systems; electrical properties; line width; polished AlN surfaces; pressure cooker test; reliability; resolution; spacings; surface resistance; thin film metallizations; Adhesives; Aging; Conductors; Electric resistance; Metallization; Resistors; Substrates; Surface resistance; System testing; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronic Manufacturing Technology Symposium, 1990, IEMT Conference., 8th IEEE/CHMT International
Conference_Location :
Baveno, Italy
Type :
conf
DOI :
10.1109/IEMT8.1990.171068
Filename :
171068
Link To Document :
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