Title :
Investigation on the flow properties of BPSG films
Author :
Tsai, Y.H. ; Hsu, S.L. ; Tseng, F.C. ; Yoo, C.S.
Author_Institution :
Taiwan Semicond. Manuf. Co., Hsin-Chu, Taiwan
Abstract :
The effects of various borophosphosilicate glass (BPSG) film postgrowth treatments on the film after-flow angles have been explored with ESCA (electron spectroscopy for chemical analysis) and FTIR (Fourier transform infrared spectroscopy). The experimental results show that longer delay times result in larger after-flow angles. Films after deionized water rinse give rise to a reentrant angle at the film-substrate interface. Different flow ambients also result in slightly different after-flow angles. ESCA and FTIR spectra show that the after-flow angle changes are due to the chemical changes on the film surface. Proper film postgrowth treatments are proposed to obtain proper after-flow angles to avoid discontinuity in metal layer deposition
Keywords :
Fourier transform spectra; X-ray photoelectron spectra; borosilicate glasses; electron spectroscopy; flow; infrared spectra of inorganic solids; insulating thin films; phosphosilicate glasses; semiconductor technology; spectrochemical analysis; B2O3-P2O5-SiO2; BPSG films; ESCA; ESCA spectra; FTIR spectra; Fourier transform infrared spectroscopy; borophosphosilicate glass; chemical analysis; delay times; electron spectroscopy; film after-flow angles; film surface chemical changes; film-substrate interface; flow ambients; flow properties; postgrowth treatments; reentrant angle; Aluminum; Atmospheric-pressure plasmas; Boats; Delay; Fluid flow; Furnaces; Plasma density; Plasma temperature; Production; Semiconductor films;
Conference_Titel :
VLSI Technology, Systems and Applications, 1989. Proceedings of Technical Papers. 1989 International Symposium on
Conference_Location :
Taipei
DOI :
10.1109/VTSA.1989.68588
