Improved resistive switching memory characteristics using novel bi-layered Ge0.2Se0.8/Ta2O5 solid-electrolytes

Novel bi-layered solid electrolytic based resistive switching memory device using Al/Cu/Ge_0.2Se_0.8/Ta₂O₅/W structure has been investigated for the first time. The tight distribution of resistance states and threshold voltage are achieved as compared to that of single layer Ge_0.2Se_0.8 solid-electrolyte. Stable endurance of ≫3.5×10⁵ cycles and excellent retention characteristics with a low compliance current of 100 nA are obtained at 85°C. The high resistance state (R_High) increases with decreasing the device size from 8 μm to 0.2 μm. The low resistance state (R_Low) is independent with different via diameters. The R_Low decreases with increasing the compliance currents from 1nA to 1mA, which can be useful for future nanoscale low power consuming nonvolatile memory device applications.