Title :
Characterization of novel SiO2/a-Si/a-SiOx tunnel barrier engineered oxide
Author :
Baek, Sungkweon ; Yang, Sangryol ; Ahn, Jae-Young ; Koo, Bonyoung ; Hwang, Kihyun ; Choi, Siyoung ; Kang, Chang-Jin ; Moon, Joo-Tae
Author_Institution :
Samsung Electron. Semicond. R&D Center, Hwasung, South Korea
Abstract :
We suggested the heterogeneously stacked oxide (HSO) for the future tunnel oxide of high density NAND flash memory. HSO has a structure of SiO2/a-Si/a-SiOx using the concept of tunnel barrier engineering. By employing HSO tunnel barrier, it was possible to fabricate the tunnel oxide, which is thicker physically and thinner electrically than the single layer tunnel oxide. The bandgap of a-SiOx can be modified, which made it possible to achieve tunnel barrier engineering without employing high-k material. By reducing the erase voltage, the reliabilities of NAND flash memory was improved.
Keywords :
NAND circuits; flash memories; silicon compounds; NAND flash memory; SiO2-Si-SiOx; heterogeneously stacked oxide; high-k material; tunnel barrier engineered oxide; Amorphous silicon; Electrons; Fabrication; Flash memory; High K dielectric materials; High-K gate dielectrics; Oxidation; Photonic band gap; Reliability engineering; Voltage; NAND; TBE; amorphous silicon; tunnel oxide;
Conference_Titel :
Memory Workshop (IMW), 2010 IEEE International
Conference_Location :
Seoul
Print_ISBN :
978-1-4244-6719-8
Electronic_ISBN :
978-1-4244-7668-8
DOI :
10.1109/IMW.2010.5488330
