Characterization of novel SiO2/a-Si/a-SiOx tunnel barrier engineered oxide

Author

Baek, Sungkweon ; Yang, Sangryol ; Ahn, Jae-Young ; Koo, Bonyoung ; Hwang, Kihyun ; Choi, Siyoung ; Kang, Chang-Jin ; Moon, Joo-Tae

Author_Institution

Samsung Electron. Semicond. R&D Center, Hwasung, South Korea

fYear

2010

fDate

16-19 May 2010

Firstpage

1

Lastpage

4

Abstract

We suggested the heterogeneously stacked oxide (HSO) for the future tunnel oxide of high density NAND flash memory. HSO has a structure of SiO₂/a-Si/a-SiOx using the concept of tunnel barrier engineering. By employing HSO tunnel barrier, it was possible to fabricate the tunnel oxide, which is thicker physically and thinner electrically than the single layer tunnel oxide. The bandgap of a-SiOx can be modified, which made it possible to achieve tunnel barrier engineering without employing high-k material. By reducing the erase voltage, the reliabilities of NAND flash memory was improved.

Keywords

NAND circuits; flash memories; silicon compounds; NAND flash memory; SiO₂-Si-SiO_x; heterogeneously stacked oxide; high-k material; tunnel barrier engineered oxide; Amorphous silicon; Electrons; Fabrication; Flash memory; High K dielectric materials; High-K gate dielectrics; Oxidation; Photonic band gap; Reliability engineering; Voltage; NAND; TBE; amorphous silicon; tunnel oxide;

fLanguage

English

Publisher

ieee

Conference_Titel

Memory Workshop (IMW), 2010 IEEE International

Conference_Location

Seoul

Print_ISBN

978-1-4244-6719-8

Electronic_ISBN

978-1-4244-7668-8

Type

conf

DOI

10.1109/IMW.2010.5488330

Filename

5488330