Title :
GaAs/GaAlAs Heterojunction Bipolar Phototransistor for Monolithic Photoreceiver Operating at 140 Mbit/s
Author :
Wang, H. ; Bacot, C. ; Chevalier, C. ; Ankri, D.
Abstract :
The first monolithic integrated photodetector-preamplifier implemented with GaAs-GaAIAs heterojunction phototransistor and transistors has been fabricated and tested. A heterojunction phototransistor (HPT), two heterojunction bipolar transistors (HBT´s) and four resistors are integrated in a 0.5 x 0.5 mm/sup 2/ GaAs chip. The photoreceiver with a 26 kOmega external feedback resistor has a bandwidth of 80 MHz with a transimpedance gain of 7000V/A. The noise measurements indicate that a minimum detectable power of -30 dBm is obtained at 140 Mbit/s for an error rate of 10/sup -9/.
Keywords :
Circuits; Etching; Fabrication; Gallium arsenide; Heterojunction bipolar transistors; Noise measurement; Nonhomogeneous media; Phototransistors; Resistors; Signal to noise ratio;
Conference_Titel :
Microwave Symposium Digest, 1986 IEEE MTT-S International
Conference_Location :
Baltimore, MD, USA
DOI :
10.1109/MWSYM.1986.1132290
