DocumentCode :
2691640
Title :
A High Gain, Monolithic Distributed Amplifier Using Cascode Active Elements
Author :
LaRue, R. ; Bandy, S. ; Zdasiuk, G.
fYear :
1986
fDate :
2-4 June 1986
Firstpage :
821
Lastpage :
824
Abstract :
A novel, monolithic, distributed amplifier has achieved a record gain of over 10 dB from 2-18 GHz. The design utilizes five quarter-micron gate length, cascode connected, FETs on epitaxial material . Circuit simulations predict over 10 dB gain from 2-30 GHz for an amplifier with seven active elements. Novel features of the design, fabrication and testing are discussed.
Keywords :
Bandwidth; Circuit simulation; Circuit testing; Distributed amplifiers; FETs; Fabrication; Gain; Laboratories; Radio frequency; Radiofrequency amplifiers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest, 1986 IEEE MTT-S International
Conference_Location :
Baltimore, MD, USA
ISSN :
0149-645X
Type :
conf
DOI :
10.1109/MWSYM.1986.1132317
Filename :
1132317
Link To Document :
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