High performance self-aligned inversion-channel MOSFETs with In0.53Ga0.47As channel and ALD-Al2O3 gate dielectric

In this work, for practical device integration in future, a self-aligned In_0.53Ga_0.47As MOSFET was successfully implemented, using molecular beam epitaxy (MBE) grown In_0.53Ga_0.47As as the channel, ALD-AI₂O₃ as the gate dielectric, and sputtered TiN as the gate metal. The key of the self-aligned process in fabricating inversion-channel III-V MOSFETs is not only to ensure good interface properly after high thermal process but also to achieve optimal dopant activation with low S/D resistance.