Title :
High performance self-aligned inversion-channel MOSFETs with In0.53Ga0.47As channel and ALD-Al2O3 gate dielectric
Author :
Chiu, H.C. ; Chang, P. ; Huang, M.L. ; Lin, T.D. ; Chang, Y.H. ; Huang, J.C. ; Chen, S.Z. ; Kwo, J. ; Tsai, Wen-Ru ; Hong, M.
Author_Institution :
Dept. of Matls. Sci. & Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan
Abstract :
In this work, for practical device integration in future, a self-aligned In0.53Ga0.47As MOSFET was successfully implemented, using molecular beam epitaxy (MBE) grown In0.53Ga0.47As as the channel, ALD-AI2O3 as the gate dielectric, and sputtered TiN as the gate metal. The key of the self-aligned process in fabricating inversion-channel III-V MOSFETs is not only to ensure good interface properly after high thermal process but also to achieve optimal dopant activation with low S/D resistance.
Keywords :
III-V semiconductors; MOSFET; aluminium compounds; atomic layer deposition; gallium arsenide; indium compounds; molecular beam epitaxial growth; Al2O3; InGaAs; atomic layer deposition; dopant activation; molecular beam epitaxy; self-aligned inversion-channel MOSFET; Aluminum oxide; Atomic layer deposition; Dielectric devices; III-V semiconductor materials; Indium gallium arsenide; Intrusion detection; MOSFETs; Molecular beam epitaxial growth; Temperature; Tin;
Conference_Titel :
Device Research Conference, 2009. DRC 2009
Conference_Location :
University Park, PA
Print_ISBN :
978-1-4244-3528-9
Electronic_ISBN :
978-1-4244-3527-2
DOI :
10.1109/DRC.2009.5354850
