Title :
Integrated circuits based on individual carbon nanotube transistors on glass substrates
Author :
Ryu, H. ; Ante, F. ; Kälblein, D. ; Zschieschang, U. ; Schmidt, O.G. ; Klauk, H.
Author_Institution :
Max Planck Inst. for Solid State Res., Stuttgart, Germany
Abstract :
Nanoscale field-effect transistors (FETs) based on individual semiconducting carbon nanotubes are potentially useful for integrated circuits with large integration densities. The high temperatures required during the synthesis of carbon nanotubes do not prevent the realization of high-performance nanotube FETs on temperature-sensitive substrates, such as glass or plastics, since the nanotubes can be transferred from the growth substrate to a liquid suspension and from there to the target substrate. This paper reports on nanoscale FETs based on individual semiconducting carbon nanotubes with good static performance on glass substrates, and their integration into logic circuits that have large small-signal gain and can be switched at frequencies up to 500 kHz.
Keywords :
carbon nanotubes; elemental semiconductors; field effect logic circuits; field effect transistors; nanotube devices; semiconductor nanotubes; C; glass substrates; individual semiconducting carbon nanotubes; integrated circuits; logic circuits; nanoscale field-effect transistors; small-signal gain; Carbon nanotubes; FETs; Glass; Integrated circuit synthesis; Logic circuits; Performance gain; Plastics; Semiconductivity; Substrates; Temperature;
Conference_Titel :
Device Research Conference, 2009. DRC 2009
Conference_Location :
University Park, PA
Print_ISBN :
978-1-4244-3528-9
Electronic_ISBN :
978-1-4244-3527-2
DOI :
10.1109/DRC.2009.5354851