• DocumentCode
    2691953
  • Title

    Model analysis of breakdown in high-voltage, water-based switches

  • Author

    Joshi, R.P. ; Qian, J. ; Kolb, J. ; Schoenbach, K.H.

  • Author_Institution
    Dept. of Electr. Eng., Old Dominion Univ., Norfolk, VA, USA
  • Volume
    1
  • fYear
    2003
  • fDate
    15-18 June 2003
  • Firstpage
    293
  • Abstract
    A time-dependent model containing several new features has been developed for treating the breakdown of water under nanosecond pulsed conditions. It is argued that the traditional mechanisms such as bubble formation and thermal heating no longer apply. Instead, the mechanism of breakdown will be dictated by the surface electric field behavior and subsequent injection of electrons at the interface. Thus, the interface layer and electrode conditions will begin to be far more important than the bulk liquid properties in determining breakdown and hold-off voltage levels. It is shown that very strong electric field enhancements can occur due to the collective orientation of dipoles near the interface. Under high voltage conditions, the injected electrons are assumed to have relatively long lifetimes due to a continuous replenishment of energy from the external field. The simulations show a breakdown within about 200 ns for an applied pulse of 20 kV for a 200 /spl mu/m water-filled switch. The predictions are in keeping with recent experimental observations by our group.
  • Keywords
    electric breakdown; electric fields; electrons; pulsed power switches; 20 kV; breakdown mechanism; dipoles orientation; electric field; electrode; high-voltage breakdown; hold-off voltage level; liquid property; thermal heating; time-dependent model; water-filled switch; Acoustic pulses; Breakdown voltage; Dielectric liquids; Electric breakdown; Electrons; Energy storage; Heating; Pulse generation; Pulse power systems; Switches;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Pulsed Power Conference, 2003. Digest of Technical Papers. PPC-2003. 14th IEEE International
  • Conference_Location
    Dallas, TX, USA
  • Print_ISBN
    0-7803-7915-2
  • Type

    conf

  • DOI
    10.1109/PPC.2003.1277713
  • Filename
    1277713